Micro-cavity III-V Lasers Monolithically Grown on Silicon

We will present our recent work on III-V micro-cavity lasers monolithically grown on silicon substrates. The III-V material is directly grown using Template-Assisted-Selective-Epitaxy (TASE) within oxide cavities patterned using conventional lithographic techniques on top of the silicon substrate. This allows for the local integration of single-crystal III-V active gain material. Two variations of this technique will be discussed: the direct growth of disc lasers and the two-step approach via a virtual substrate. Room temperature single-mode optically pumped lasing is achieved in GaAs micro-cavity lasers, and devices show a remarkably low shift of the lasing threshold (T0 = 170 K) with temperature. Dependence on cavity geometry and pump power will be discussed.

By: B. Mayer, S. Mauthe, Y. Baumgartner, S. Wirths, J. Winiger, P. Staudinger, H. Schmid, M. Sousa, L. Czornomaz and K. E. Moselund

Published in: RZ3922 in 2017


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