We will present our recent work on III-V micro-cavity lasers monolithically grown on silicon substrates. The III-V material is directly grown using Template-Assisted-Selective-Epitaxy (TASE) within oxide cavities patterned using conventional lithographic techniques on top of the silicon substrate. This allows for the local integration of single-crystal III-V active gain material. Two variations of this technique will be discussed: the direct growth of disc lasers and the two-step approach via a virtual substrate. Room temperature single-mode optically pumped lasing is achieved in GaAs micro-cavity lasers, and devices show a remarkably low shift of the lasing threshold (T0 = 170 K) with temperature. Dependence on cavity geometry and pump power will be discussed.
By: B. Mayer, S. Mauthe, Y. Baumgartner, S. Wirths, J. Winiger, P. Staudinger, H. Schmid, M. Sousa, L. Czornomaz and K. E. Moselund
Published in: RZ3922 in 2017
LIMITED DISTRIBUTION NOTICE:
This Research Report is available. This report has been submitted for publication outside of IBM and will probably be copyrighted if accepted for publication. It has been issued as a Research Report for early dissemination of its contents. In view of the transfer of copyright to the outside publisher, its distribution outside of IBM prior to publication should be limited to peer communications and specific requests. After outside publication, requests should be filled only by reprints or legally obtained copies of the article (e.g., payment of royalties). I have read and understand this notice and am a member of the scientific community outside or inside of IBM seeking a single copy only.
Questions about this service can be mailed to reports@us.ibm.com .