We have investigated the dependence of post-breakdown (BD) conduction on gate oxide thickness in the range between 1.8 and 2.5 nm. A weak increase of the post-BD leakage is found as oxide thickness is decreased.
By: Salvo Lombardo, James H. Stathis, Barry Paul Linder
Published in: Microelectronics Reliability, volume 42, (no 9-11), pages 1481-4 in 2002
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