Self-Consistent Electro-Thermal Modeling for FinFET Technologies

A self-consistent 3-D computational modeling methodology for analyzing thermal and electrical transport in nano-scale devices is developed. The methodology is applied to multi-finger doublegate FinFETs to compute the device characteristics, spatial power distribution, and spatial temperature distribution. A methodology for computing the optimum operating voltages based on the required range of operating temperature is presented. The effect of device dimensions on temperature rise and device performance for poly-gate and metal-gate devices is investigated. Results show that mid-gap metal-gate device is better than band-edge metalgate device and poly-gate device from both heating and device performance perspective. The mid-gap metal-gate device causes 10 % less heating in the equal performance case with respect to poly-gate counterpart, and offers 1/6 lower leakage power for the equal on-current case with respect to metal-gate counterpart.

By: Satish Kumar; Rajiv V. Joshi; Ching-Te Chuang; Keunwoo Kim; Jayathi Y. Murthy

Published in: RC23834 in 2005


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