Characterization of the Hot-Electron-Induced Degradation in Thin SiO2 Gate Oxides

No Abstract Available.

By: E. Cartier

Published in: Microelectronics and Reliability, volume 38, (no 2), pages 201-11 in 1998

Please obtain a copy of this paper from your local library. IBM cannot distribute this paper externally.

Questions about this service can be mailed to reports@us.ibm.com .