Copyright © (2005) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics
Surface potential profiles of the junction area of a cleaved n-Si/HfO2/p+-poly-Si gate stack reveal a dipole potential in the oxide, hole trapping at the HfO2/poly-Si interface, with the Fermi level ~0.4 eV below the Si conduction band edge and enhanced and inhomogeneous hole depletion in the p+-poly-Si. The dipole accounts for band bending reduction in the n-Si and is consistent with flat voltage shifts reported for similar gate stacks.
By: R. Ludeke; V. Narayanan; E. P. Gusev; E. Cartier; S. J. Chey
Published in: Applied Physics Letters, volume 86, (no 12), pages Art. no. 122901 in 2005
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