Deformation Field in Single-Crystal Semiconductor Substrates caused by Metallization Features

The results of an x-ray microdiffraction study of the deformation field surrounding Ni thin film pads on a 111-type Si wafer are reported. The strain fields were mapped by measuring the Si 333 reflection intensities over an area containing several pads. The positions of the pads were simultaneously determined by recording the Ni k-a fluorescence as a function of position. The results indicate that, contrary to the results from analytical solutions and finite-element models, the position of maximum strain contrast is slightly outside the pad edge.