Combined Focused Ion Beam/Electron Microscopy Investigation of Laser Diodes

We used local focused ion beam (FIB) milling to expose cross-sectional facets and to fabricate thin membranes, with submicron precision, for SEM/EBIC and TEM investigations of strained InGaAs/AlGaAs quantum well ridge-type laser diodes. We analyzed the laser structure and mirror coating by conventional and high-resolution TEM, and studied intentionally generated defects in overstressed lasers. For this we applied EBIC imaging to select the defective areas for local FIB milling.

By: A. Dietzel, A. Jakubowicz and R. F. Broom (Cambridge Univ., England)

Published in: Institute of Physics Conference Series, volume 146, (no ), pages 583-6 in 1995

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