We have recently developed a novel III-V integration scheme, where III-V material is grown directly on top of Si within oxide nanotubes or microcavities which control the geometry of nanostructures. This allows us to grow III-V material non-lattice matched on any crystalline orientation of Si, to grow arbitrary shapes as well as abrupt heterojunctions, and to gain more flexibility in tuning of composition. In this talk, applications for electronic devices such as heterojunction tunnel FETs and microcavity III-V lasers monolithically integrated on Si will be discussed along with an outlook for the future.
By: B. Mayer, S. Wirths, H. Schmid, S. Mauthe, C. Convertino, Y. Baumgartner, L. Czornomaz, M. Sousa, H. Riel, K. E. Moselund
Published in: Low-Dimensional Materials and Devices 2017 , SPIEProc. SPIE 10349,, p.doi:10.1117/12.2275871 in 2017
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