Monolithic integration of III-V nanostructures for electronic and photonic applications

We have recently developed a novel III-V integration scheme, where III-V material is grown directly on top of Si within oxide nanotubes or microcavities which control the geometry of nanostructures. This allows us to grow III-V material non-lattice matched on any crystalline orientation of Si, to grow arbitrary shapes as well as abrupt heterojunctions, and to gain more flexibility in tuning of composition. In this talk, applications for electronic devices such as heterojunction tunnel FETs and microcavity III-V lasers monolithically integrated on Si will be discussed along with an outlook for the future.

By: B. Mayer, S. Wirths, H. Schmid, S. Mauthe, C. Convertino, Y. Baumgartner, L. Czornomaz, M. Sousa, H. Riel, K. E. Moselund

Published in: Low-Dimensional Materials and Devices 2017 , SPIEProc. SPIE 10349,, p.doi:10.1117/12.2275871 in 2017


This Research Report is available. This report has been submitted for publication outside of IBM and will probably be copyrighted if accepted for publication. It has been issued as a Research Report for early dissemination of its contents. In view of the transfer of copyright to the outside publisher, its distribution outside of IBM prior to publication should be limited to peer communications and specific requests. After outside publication, requests should be filled only by reprints or legally obtained copies of the article (e.g., payment of royalties). I have read and understand this notice and am a member of the scientific community outside or inside of IBM seeking a single copy only.


Questions about this service can be mailed to .