Microcharacterization of Semiconductor Laser Diodes -- Materials and Devices

Copyright 1996 Society of Photo-Optical Instrumentation Engineers. This paper was (will be) published in SPIE Proceedings and is made available as an electronic reprint [preprint] with permission of SPIE. Single print or electronic copies for personal use only are allowed. Systematic or multiple reproduction, distribution to multiple locations through an electronic listserver or other electronic means, duplication of any material in this paper for a fee or for commericial purposes, or modification of the content of the pater are all prohibited. By choosing to view or print this document, you agree to all the provisions of the copyright law protecting it.

This paper illustrates the application of microscopy techniques to investigate various material processing and device-related problems that one encounters in the development of semiconductor laser diodes. General comments are made concerning local characterization of semiconductors. Various laser reliability/degradation issues are addressed. As an example of how microscopy techniques facilitate the building of modern lasers, the application of the ordering phenomenon is discussed.

By: A. Jakubowicz

Published in: SPIE Proceedings, volume 2780, (no ), pages 344-54 in 1996

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