Microcavity Lasers on Silicon by Template-Assisted Selective Epitaxy of Microsubstrates

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The vision of microchips that benefit from the high data rates of optical links has recently lead to novel concepts for the monolithic integration of active gain materials on silicon. In this work, we use template-assisted selective epitaxy (TASE) for the monolithic integration of GaAs microsubstrates on silicon which allow the subsequent integration of lattice-matched III-V laser cavities. We demonstrate room-temperature operation of optically pumped microdisk-lasers with hexagonal top-facets and diameters as low as 1.2µm. The devices exhibit uniform emission spectra, low lasing thresholds of Pth=13.6 ± 0.7 pJ/pulse and a high temperature stability (T0=370K). Scanning electron microscope and photoluminescence analysis of larger devices with a flat top-facet reveal a rotation of the crystal orientation and further reduced lasing thresholds. Our results show that monolithic integration of III-V micro-substrates on silicon offer a versatile platform for on chip light sources with excellent optical properties.

By: Benedikt F. Mayer, Stephan Wirths, Svenja Mauthe, Philipp Staudinge, Marilyne Sousa, Joel Winiger, Heinz Schmid, Kirsten E. Moselund

Published in: IEEE Photonics Technology Letters, volume , (no ), pages 10.1109/LPT.2019.2916459 in 2019


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