We report on the fabrication and electrical characterization of n-FETs and p-FETs made with vapor-liquid-solid (VLS) grown silicon nanowires, exhibiting electrical characteristics approaching those of mainstream silicon devices. Near ideal subthreshold slope of 63 mV/decade was measured for top-gated n-FETs with a Si nanowire channel diameter down to 3.5 nm. A key feature of our devices was the low contact resistivity obtained by the fabrication of epitaxial silicon contacts to the nanowire.
By: G. M. Cohen; S. Bangsaruntip; M. J. Rooks; L. Gignac
Published in: RC24456 in 2007
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