We have fabricated, for the first time, a novel vertical p-channel metal-oxide-semiconductor field-effect transistor (MOSFET), so called high mobility hetero-junction transistor (HMHJT). Significantly reduced short channel effects and floating body effects, and enhanced drive current have been achieved. Compared to a Si control device, the fabricated p-HMHJThasa
1.65Xhigher drive current (Vds=-1.6Vand Vg - Vt = -2 V), and a 70X lower off-state leakage
(Vds = -1.6 V).
By: Qiqing (Christine) Ouyang, Xiangdong Chen, Al F. Tasch, Leonard F. Register, Sanjay K.Banerjee,Jack O. Chu, John A., Ott
Published in: RC21927 in 2001
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