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The effect of oxide breakdown on the performance of CMOS inverters has been investigated. The results show that the inverter performance can be affected by the breakdown in a different way depending on the stress polarity applied to the inverter input. In all the cases, the oxide breakdown conduction has been modeled as gate-to-diffusion leakage with a power law formula of the type I=KV p which was previously found to describe the breakdown in capacitor structures. This implies that
the breakdown physics at oxide level is the same that at circuit level.
By: Rosana Rodriguez, James H. Stathis, Barry Paul Linder
Published in: IEEE Electron Device Letters, volume 24, (no 2), pages 114-16 in 2003
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