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By: A. Abramo (Univ. Bologna, It.), L. Baudry (Univ. Sci. et Tech., Lille, Fr.), R. Brunetti (Univ. Modena, It.), R. Castagne (Univ. Paris-Sud, Fr.), M. Charef (Univ. Sci. et Tech., Lille, Fr.), F. Dessenne (Univ. Sci. et Tech., Lille, Fr.), P. Dollfus (Univ. Paris-Sud, Fr.), R. Dutton (Stanford Univ.), W. L. Engl (Univ. Aachen, Germ.), R. Fauquembergue (Univ. Sci. et Tech., Lille, Fr.), C. Fiegna (Univ. Bologna, It.), M. V. Fischetti, S. Galdin (Univ. Paris-Sud, Fr.), N. Goldsman (Univ. Md.), M. Hackel (Tech. Univ. Vienna, Austria), C. Hamaguchi (Osaka Univ., Jap.), K. Hess (Beckman Inst.), K. Hennacy (Univ. Md.), P. Hesto (Univ. Paris-Sud, Fr.), J. M. Higman (Beckman Inst.), T. Iizuka (Microelectronics Res. Labs., Jap.), C. Jungemann (Univ. Aachen, Germ.), Y. Kamakura (Osaka Univ., Jap.), H. Kosina (Tech. Univ. Vienna, Austria), T. Kunikiyo (Mitsubishi Electric Corp., Jap.), S. E. Laux, H. Lin (Univ. Md.), C. Maziar (Univ. Tex., Austin), H. Mizuno (Osaka Univ., Jap.), H. J. Peifer (Univ. Aachen, Germ.), S. Ramaswamy (Univ. Mass.), N. Sano (NTT, Jap.), P. G. Scrobhachi (Univ. Mass.), S. Selberherr (Tech. Univ. Vienna, Austria), M. Takenaka (BLSI Res. Lab., Jap.), T. W. Tang (Univ. Mass.), K. Taniguchi (Osaka Univ., Jap.), J. L. Thobel (Univ. Sci. et Tech., Lille, Fr.), R. Thoma (Univ. Aachen, Germ.), K. Tomizawa (Meiji Univ., Jap.), M. TOmizawa (NTT LSI Labs., Jap.), T. Vogelsang (Siemens, Germ.), S. L. Wang (Univ. Md.), X. Wang (Mitsubishi Electric Corp., Jap.), C. S. Yao (Stanford Univ.), P. D. Yoder (Univ. Ill, Urbana-Champaign) and A. Yoshii (NTT LSI Labs., Jap.)
Published in: IEEE Transactions on Electron Devices, volume 41, (no 9), pages 1646-54 in 1994
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