Shockley-Read-Hall Mechanism for Dark Current in Ge-on-SOI Lateral PIN Photodetectors

The dark current in Ge-on-SOI based photodetectors is analyzed using temperaturedependent current-voltage measurements. Detectors with 10 μm x 10 μm area, and finger spacing of 1.1 μm had dark current that increased from 12 nA at room temperature to 138 nA at 86 oC and -0.5 V applied bias. The activation energy for the reverse leakage current was found to be 0.3-0.35 eV, while ideality factors between 1.4 and 1.8 were determined for the forward leakage current. The results indicate that the reserve and forward dark current in these devices is dominated by Shockley-Read-Hall generation and recombination, respectively.

By: S. J. Koester, L. Schares, C. L. Schow, G. Dehlinger, R. A. John

Published in: RC24490 in 2008


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