Electrical Hot Electron Spin Injection into a Semiconductor from a Magnetic Tunnel Transistor

A magnetic tunnel transistor is used to electrically inject spin-polarized hot electrons into a multi GaAs/In0.2Ga0.8As quantum well light-emitting diode. Electroluminescence (EL) from the quantum wells shows a polarization of ~ 10% after subtraction of a linear background polarization, indicating successful injection of hot electron spins into semiconducting GaAs. The EL polarization shows a strong dependence on the bias voltage across the light emitting diode, which may originate from changes in the electron spin relaxation rate in the quantum wells under different bias

By: X. Jiang, R. Wang, S. van Dijken, R. Shelby, R. Macfarlane, G.S. Solomon, J. Harris, S.S.P. Parkin

Published in: RJ10298 in 2003


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