A magnetic tunnel transistor is used to electrically inject spin-polarized hot electrons into a multi GaAs/In0.2Ga0.8As quantum well light-emitting diode. Electroluminescence (EL) from the quantum wells shows a polarization of ~ 10% after subtraction of a linear background polarization, indicating successful injection of hot electron spins into semiconducting GaAs. The EL polarization shows a strong dependence on the bias voltage across the light emitting diode, which may originate from changes in the electron spin relaxation rate in the quantum wells under different bias
conditions.
By: X. Jiang, R. Wang, S. van Dijken, R. Shelby, R. Macfarlane, G.S. Solomon, J. Harris, S.S.P. Parkin
Published in: RJ10298 in 2003
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