Laterally-Scaled Si/Si0.7Ge0.3 n-MODFETs with fmax over 200 GHz and Low Operating Bias

Copyright © (2005) by IEEE. Permission to make digital or hard copies of part or all of this work for personal or classroom use is granted without fee provided that copies are not made or distrubuted for profit. To copy otherwise, to republish, to post on servers, or to redistribute to lists, requires prior specific permission and/or a fee.

We report on the dc and rf characterization of laterally-scaled, Si/SiGe n-MODFETs. Devices with Lg = 80 nm and Lds = 300 nm had fT = 80 GHz and fmax = 210 GHz. Separate devices with Lg = 70 nm also had fT values as high as 92 GHz. The MODFETs displayed enhanced fT at reduced drain-to-source voltage, Vds, compared to Si MOSFETs with similar fT at high Vds.

By: S. J. Koester, K. L. Saenger, J. O. Chu, Q. C. Ouyang, J. A. Ott, K. A. Jenkins, D. F. Canaperi, J. A. Tornello, C. V. Jahnes, S. E. Steen

Published in: IEEE Electron Device Letters, volume 26, (no 3), pages 178-80 in 2005


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