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We report on the dc and rf characterization of laterally-scaled, Si/SiGe n-MODFETs. Devices with Lg = 80 nm and Lds = 300 nm had fT = 80 GHz and fmax = 210 GHz. Separate devices with Lg = 70 nm also had fT values as high as 92 GHz. The MODFETs displayed enhanced fT at reduced drain-to-source voltage, Vds, compared to Si MOSFETs with similar fT at high Vds.
By: S. J. Koester, K. L. Saenger, J. O. Chu, Q. C. Ouyang, J. A. Ott, K. A. Jenkins, D. F. Canaperi, J. A. Tornello, C. V. Jahnes, S. E. Steen
Published in: IEEE Electron Device Letters, volume 26, (no 3), pages 178-80 in 2005
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