Remote Coulomb Scattering in Metal-Oxide-Semiconductor Field-Effect Transisitors: Screening by Electrons in the Gate

Copyright © (2003) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics

The effect of screening of Remote Coulomb Scattering (RCS) by free electrons in the polycrystalline silicon (polysilicon) gate of a Metal-Oxide-Semiconductor transistor has been analyzed. We have completed a previous model of RCS by adding the e .ects of the screening by electrons in the gate assuming a Thomas-Fermi dielectric function to take into account the response of the gate. A Monte Carlo simulator has been included in this model, in addition to phonon scattering, surface-roughness scattering and Coulomb scattering due to substrate impurities. Using this Monte Carlo simulator, we have evaluated mobility curves for di .erent values of the oxide thickness. Although the RCS effect is certainly weakened by the screening, it is still quite important for very thin oxide layers (Tox < 1nm ), and therefore should be taken into account.

By: Francisco Gamiz, Massimo V. Fischetti

Published in: Applied Physics Letters, volume 83, (no 23), pages 4848-50 in 2003


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