Measurements and modeling of the post exposure bake (PEB) process of a chemically amplified resist reveal that diffusion plays little role and that the observed spreading of exposed regions results primarily from chemical kinetics in regions where a photo-acid gradient exists. Analysis of volatile products during PEB reveals new side-reaction pathways
By: William Hinsberg, John Hoffnagle, Francis Houle, Hiroshi Ito, Martha Sanchez, Mark Sherwood, Greg Wallraff
Published in: RJ10179 in 2000
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