—Carrier confinement in metal-gated UTSOI devices is examined as a function of gate work function using selfconsistent quantum-mechanical simulations. The requirement to achieve the same off-current leads to a much weaker confining potential as the work function is shifted from the band edge. For a given gate work function and off-current target, it is shown that the confinement achieved through application of a back gate voltage is stronger than that from doping the body of the device. The temperature dependence of confinement is also studied and discussed in the context of device design.
By: Arvind Kumar; Robert H. Dennard
Published in: RC23682 in 2005
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