Copyright © (2001) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics
Misfit dislocations at Si1-xGex/Si interfaces have been imaged by x-ray
microdiffraction using the 004 diffraction peak of both the Si1-xGex layer and the Si(001)
substrate. At the Si1-xGex layer peak, a decrease in the diffracted intensity is found at
dislocations, with features as narrow as 4 microns. Similar features are seen using the Si
peak; however, they are usually broader and the diffracted intensity is found to increase
at the dislocations. The increased intensity of the Si peak is due to the loss of extinction
resulting from the distortion of the crystal lattice near the dislocation. However, the
epitaxially-grown Si1-xGex layer is much thinner than the extinction depth; therefore, the
distortion of the lattice in the Si1-xGex layer results primarily in the broadening of the Si1-
xGex rocking curve with a corresponding decrease in the peak intensity. We also show
that the distortion of the crystal lattice extends throughout the entire epitaxial layer
structure.
By: P. M. Mooney, J. L. Jordan-Sweet, S. H. Christiansen
Published in: Applied Physics Letters, volume 79, (no 15), pages 2363-5 in 2001
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