Copyright © (1995) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics
The incorporation of In in the growth of crescent-shaped In(0.12)Ga(0.88)As quantum wires embedded in (AlAs)4(GaAs)8 superlattice barriers is studied in atomic detail using cross-sectional scanning tunneling microscopy. It is found that the In distribution in both the surface and the first subsurface layer can be atomically resolved in the empty- and filled-state images, respectively. Strong In segregation is seen at the InGaAs/GaAs interfaces, but neither an expected enhancement of the In concentration at the center of the quantum wire compared to the planar quantum well nor In clustering beyond the statistical expectation is observed.
By: M. Pfister, M. B. Johnson, S. F. Alvarado, H. W. M. Salemink, U. Marti (EPFL, Switz.), D. Martin (EPFL,Switz.), F. Morier-Genoud (EPFL, Switz.) and F. K. Reinhart (EPFL, Switz.)
Published in: Applied Physics Letters, volume 67, (no 10), pages 1459-61 in 1995
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