We report on the thermal-activation nature of magnetic switching in
magnetic nanostructures, using the junction magnetoresistance of a current-
perpendicular magnetic spin-valve device as a probe. A spin-valve junction
structure was fabricated using electron-beam lithography. A sweep-rate-
dependent magnetic switching Þeld was obtained in the quasi-static limit.
Results conÞrm the predictions of a single-domain thermal activation model.
The scaling relation between the magnetic Þeld sweep rate, the magnetic
switching Þeld, and the sample size is veriÞed for sample dimensions of 0.1 by
0.2 µm^2 .
By: J. Z. Sun , L. Chen , Y. Suzuki , S. S. P. Parkin , R. H. Koch
Published in: Journal of Magnetism and Magnetic Materials, volume 247, (no 3), pages L237-41 in 2002
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