Hot-Electron Induced Passivation of Silicon Dangling Bonds at the Si(111)/SiO(sub2) Interface

Copyright © (1996) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics

It is demonstrated that pre-existing silicon dangling bonds in Al-gate metal-oxide-semiconductor capacitors on (111) silicon substrates are passivated during hot-electron sress, while defects - of yet unidentified nature - are simultaneiously generated. This degradation behavior mimics the interface degradation caused by atomic hydrogen from a remote plasma. (Appl. Phys. Lett. 63, 1510(1993), proving that hydrogen release by hot electrons leads to interface degradation, but the silicon dangling bond is not the dominant interface defect. (Dept748)

By: E. Cartier and J. H. Stathis

Published in: Applied Physics Letters, volume 69, (no 1), pages 103-5 in 1996

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