Effect of Body Contacts on High-Speed Circuits in 90 nm CMOS SOI Technology

Silicon-on-insulator (SOI) technology has been successfully used for very high performance VLSI circuits for a few years now. These processes employ partially depleted FET devices with floating bodies. To avoid a time-dependent behavior of these devices in sensitive circuitry, selected bodies can optionally be tied to a controlled potential by means of body contacts. The device then is no longer affected by trapped charges within the channel, thus preventing signal-pattern-dependent variations in V_T. The effect of such body contacts on two representative circuits, a CML buffer and a distributed amplifier, has been studied. It is shown that the introduction of body contacts reduces the bandwidth, increases the jitter but also increases the gain of amplifier circuits.

By: Jonas R.M. Weiss, Christian Menolfi, Thomas Morf, Martin L. Schmatz, Heinz Jaeckel

Published in: RZ3602 in 2005


This Research Report is available. This report has been submitted for publication outside of IBM and will probably be copyrighted if accepted for publication. It has been issued as a Research Report for early dissemination of its contents. In view of the transfer of copyright to the outside publisher, its distribution outside of IBM prior to publication should be limited to peer communications and specific requests. After outside publication, requests should be filled only by reprints or legally obtained copies of the article (e.g., payment of royalties). I have read and understand this notice and am a member of the scientific community outside or inside of IBM seeking a single copy only.


Questions about this service can be mailed to reports@us.ibm.com .