Copyright © (2003) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics
High-resolution x-ray diffraction (HRXRD) was used to monitor silicon-on-insulator (SOI)
device fabrication processes. The use of HRXRD is attractive since it is non-destructive and can
be applied directly to product wafers. We show the usefulness of this technique for the
characterization of amorphizing implants for shallow junctions, solid phase re-crystallization of
implanted junctions, cobalt-silicide formation, and oxidation; all are critical processes for
complementary metal oxide semiconductor (CMOS) device fabrication on SOI. We also found
the technique applicable to multi-layered SOI structures fabricated by wafer bonding, where the
tilt and rotation of each SOI layer with respect to the handle substrate, allowed us to obtain
independent measurements of each SOI film.
By: Guy M. Cohen, Patricia M. Mooney, H Park, Cyril Cabral Jr, Erin C. Jones
Published in: Journal of Applied Physics, volume 93, (no 1), pages 245-50 in 2003
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