Using Phthalocyanine Precursors to Prepare Oxide Thin Films: Decoupling the Growth Rate From the Evaporation Rate

Copyright © (1997) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics

Major challenges concerning the use of chemical beam epitaxy deposition techniques are posed by the lack of reliable in-situ composition control and well-behaved metal-organic precursors. To circumvent these shortcomings we propose the use of a different type of metal-organic precursors, namely molecules resistant to high temperatures, for the growth of thin films. As these molecules cannot be decomposed by the substrate temperature, they are subjected to a chemical reaction with a beam of activated species. The major advantages of this novel deposition process are listed and illustrated by the growth of CuO and YBa(2)Cu(3)O(7) thin films.

By: E. Machler, F. Arrouy, E. Fritsch, J. G. Bednorz, H. Berke, J. R. Huber, J.-P. Locquet

Published in: Applied Physics Letters, volume 71, (no 5), pages 710-2 in 1997

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