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In the La-Ti-O system many phases with different structures exist depending on the actual oxygen content. Starting from LaTiO3, which has an orthorhombic unit cell, to the monoclinic La2Ti2O7 structure, first semiconducting, then metallic and finally ferroelectric characteristics can be obtained at room temperature. Recent transmission electron microscopy studies of the bulk materials showed that the transformation of the LaTiO3 structure to La2Ti2O7 is based on the insertion of an additional oxygen plane in the {110} perovskite planes. A controlled insertion of this oxygen plane would allow heterostructures to be grown that exhibit different physical properties but have perfect chemical compatibility. Here, we report on our results of epitaxially grown thin films of La2Ti2O7 on (110)-oriented SrTiO3 and LaAlO3 substrates using sequential deposition of La and Ti under a beam of atomic oxygen. The epitaxial behavior and the microstructural properties of these films were investigated by transmission electron microscopy.
By: J.W. Seo, J. Fompeyrine and J.-P. Locquet
Published in: SPIE Proceedings, volume 3481, (no ), pages 326-33 in 1998
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