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Pentacene-based organic field effect transistors exhibit enormous potential as active elements in a number of applications. One significant obstacle to commercial application remains: no completely lithographic process exists for forming high performance devices. Processing constraints prevent electrodes from being lithographically patterned once the semiconductor is deposited, but depositing the electrodes before the semiconductor leads to low performance transistors. By using self assembled monolayers to change the surface energy of the metal electrodes and morphology of the pentacene subsequently grown on the electrodes, high performance transistors may be formed using a process compatible with lithographic definition of the source and drain electrodes.
By: I. Kymissis, C. D. Dimitrakopoulos, S. Purushothaman
Published in: IEEE Transactions on Electron Devices, volume 48, (no 6), pages 1060-4 in 2001
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