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We present output and transfer characteristics of single-gated, 36nm, 46nm and 56nm channel length SOI MOSFETs with a V-groove design. For the shortest devices we nd transconductances as high as 900S/m and drive currents of 490A/m at Vgs-Vth = 0.6V. The V- groove approach combines the advantages of a controlled, extremely abrupt doping pro le between the highly doped source/drain and the undoped channel region with an excellent suppression of short-channel e ects. In addition, our
V-groove design has the potential of synthesizing devices in the 10nm range.
By: Joerg Appenzeller, Richard Martel, Phaedon Avouris, Paul M. Solomon, Joachim Knoch, Joerg Scholvin, Jesus del Alamo, Philip M. Rice
Published in: IEEE Electron Device Letters, volume 23, (no 2), pages 100-2 in 2002
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