The effect of thermal annealing on Si/SiGe heterostructures is studied using Raman spectroscopy. The structures consisted of Si on relaxed Si,,,Ge,,, where the top Si thickness was ‘20-30 nm. MicroRaman spectroscopy with 488 nm incident radiation revealed no significant shift in the strained Si peak position with thermal annealing at temperatures up to 1100°C for 30 seconds. However, the intensity of the Si peak was systematically reduced with increasing thermal processing, a result which is attributed interdiffusion at the Si/SiGe interface resulting in an apparent thinning of the Si cap layer.
By: S. J. Koester, K. Rim, J. 0. Chu, P. M. Mooney, .I. A. Ott, M. A. Hargrove
Published in: RC22031 in 2001
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