Magnetic tunnel junctions consisting of permalloy and cobalit thin film electrodes, separated by a thin aluminum oxide tunnel barrier, have been fabricated by e-beam lithography at dimensions down to 120 nanometers. The devices are fabricated by sputter deposition and ion milling. They exhibit magnetoresistances of up to 22% at room temperature. Evidence of individual domain switching is observed. The smaller junctions have resistances in the kilohm range, which are easily measured, leading to the possibility of sensing and microelectronic applications.
By: S. A. Rishton, Y. Lu (Brown Univ.), R. A. Altman, A. C. Marley, X. P. Bian, C. Jahnes, R. Viswanathan, G. Xiao (Brown Univ.), W. J. Gallagher and S. S. P. Parkin
Published in: Journal of Microelectronic Engineering, volume 35, (no 1-4), pages 249-52 in 1997
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