Transport and exchange of hydrogen isotopes in silicon device-related stacks

Copyright © (2004) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics

Deuterium and hydrogen transport and exchange in MOS device-related stacks were studied using elastic recoil detection (ERD). The samples were typical device structures (single, double, and triple layers) alternating thermally grown silicon oxide and polysilicon, silicon nitride, silicon oxynitride, and borophosphosilicate glass (BPSG) deposited by chemical vapor (CVD) on crystalline silicon. CVD was performed with either standard (hydrogen) or deuterated precursors. Postdeposition annealings were carried out at 350 . 800C for 15 . 300 min in argon or forming gas containing either D2 or H2. Except for silicon nitride, all materials were permeable to hydrogen and deuterium in the temperature range studied. Isotope exchange in the poly-Si/SiO2 case was observed above 450C. BPSG showed very little relative exchange. Concentration depth profiles for the isotopes remaining from CVD and introduced upon annealing varied with sample structure, but for a given stack were always seen to be very similar. Implications of our findings to device processing will be discussed.

By: Cristiano Krug, Evgeni Gousev, Eduard Cartier, Theodore H. Zabel

Published in: Journal of Applied Physics, volume 95, (no 3), pages 887-95 in 2004


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