We describe a thermoelectric device structure that confines the thermal and electric fields at the boundaries of the cold end, and exploits the reduction of thermal conductivity at the interfaces and the poor electron-phonon coupling at the junctions. The measured temperature-current and
voltage-current characteristics of a prototype cold point-contact thermoelectric cooler based on a p-type Bi0.5Sb1.5Te3 and n-type Bi2Te2.9Se0.1 material system indicate an enhanced thermoelectric figure-of-merit ZT in the range of 1.4-1.7 at room temperature.
By: U. Ghoshal, S. Cordes, M. Farinelli, S. Ghoshal, C. McDowell, L. Shi
Published in: RC22446 in 2002
LIMITED DISTRIBUTION NOTICE:
This Research Report is available. This report has been submitted for publication outside of IBM and will probably be copyrighted if accepted for publication. It has been issued as a Research Report for early dissemination of its contents. In view of the transfer of copyright to the outside publisher, its distribution outside of IBM prior to publication should be limited to peer communications and specific requests. After outside publication, requests should be filled only by reprints or legally obtained copies of the article (e.g., payment of royalties). I have read and understand this notice and am a member of the scientific community outside or inside of IBM seeking a single copy only.
Questions about this service can be mailed to reports@us.ibm.com .