Recent research on nanowires (NWs) demonstrated the ability of III-V semiconductors to adopt a different crystallographic phase when they are grown as nanostructures, giving rise to a novel class of materials with unique properties. Controlling the crystal structure however remains difficult and the geometrical constraints of NWs cause integration challenges for advanced devices. Here, we report for the first time on the phase-controlled growth of micron-sized planar InP films by selecting confined growth planes during template-assisted selective epitaxy. We demonstrate this by varying the orientation of predefined templates, which results in concurrent formation of zinc-blende (ZB) and wurtzite (WZ) material exhibiting phase purities of 100% and 97%, respectively. Optical characterization revealed a 70 meV higher band gap and a 2.5× lower lifetime for WZ InP in comparison to its natural ZB phase. Further, a model for the transition of the crystal structure is presented based on the observed growth facets and the bonding configuration of InP surfaces.
KEYWORDS: Crystal structure, zinc-blende, wurtzite, indium phosphide, template-assisted selective epitaxy
By: Philipp Staudinger, Svenja Mauthe, Kirsten E. Moselund, Heinz Schmid
Published in: Nano Letters, volume 18, (no 12), pages DOI:10.1021/acs.nanolett.8b03632 in 2018
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