Quantum-Based Simulation Analysis of Scaling in Ultra-Thin Body Device Structures

Copyright © (2005) by IEEE. Permission to make digital or hard copies of part or all of this work for personal or classroom use is granted without fee provided that copies are not made or distrubuted for profit. To copy otherwise, to republish, to post on servers, or to redistribute to lists, requires prior specific permission and/or a fee.

We present self-consistent solutions of ultra-thin body device structures to understand the influence of quantum-mechanical confinement on the predictions of classical scaling theory. We show that two-dimensional electrostatics considerations play a more dominant role than quantum-mechanical effects in the subthreshold behavior of ultra-thin fully-depleted silicon-on-insulator structures. We also show how modifications to the doping profile can be used to alleviate two-dimensional short-channel effects.

By: Arvind Kumar, Jakub Kedzierski,, Steven E. Laux

Published in: IEEE Transactions on Electron Devices, volume 52, (no 4), pages 614-17 in 2005


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