80 nm Gate-Length Si/Si0.7Ge0.3 n-MODFET with 194 GHz fmax

We report on the dc and rf performance of scaled n-channel Si/SiGe modulation-doped field effect transistors (n-MODFETs) grown by ultra-high vacuum chemical vapor deposition. Devices with source-to-drain spacing of 300 nm, and gate length of 80 nm (70 nm) displayed fmax = 194 GHz (175 GHz) and fT = 70 GHz (79 GHz).

By: S. J. Koester, K. L. Saenger, J. O. Chu, Q. C. Ouyang, J. A. Ott, M. J. Rooks, D. F. Canaperi, J. A. Tornello, C. V. Jahnes, S. E. Steen

Published in: Electronics Letters, volume 39, (no 23), pages 1684-5 in 2003

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