Dielectric Response in Electron Transport across Metal-Oxide-Semiconductor Structures

The oxide-field dependent threshold shifts for STM injected electrons into MOS structures follow classical image force theory, which yields a dielectric constant Eim=2.74. A similar value is derived from a new classical dielectric response theory, which suggests that the dynamic response is not determined by the transit time, but rather by the nearly field independent mean velocity for the electron to reach the image potential maximum.