Backside Optical Emission Diagnostics for Excess IDDQ

        Backside optical emission was used to diagnose excess quiescent current in a multi-million gate microprocessor. Emission images showed the current was due to FET's improperly set in a conducting state. The utility of backside optical emission for IC diagnostics is discussed, and requirements for optical detectors and sample preparation are considered.

By: J. A. Kash, J.C. Tsang, Richard F. Rizzolo (IBM Poughkeepsie), Atul K. Patel (IBM Hopewell Junction) and Aaron D. Shore (IBM Hopewell Junction)

Published in: RC20646 in 1996

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