Elastic Strain Relaxation in Free-Standing SiGe/Si Structures

Copyright © (2004) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics

We have investigated elastic strain relaxation, i.e. strain relaxation without the introduction of dislocations or other defects, in free-standing SiGe/Si structures. We first fabricated free-standing Si layers supported at a single point by an SiO2 pedestal and subsequently grew an epitaxial SiGe layer. The measured strain relaxation of the SiGe layer agrees well with that calculated using a force-balance model for strain sharing between the SiGe and strained Si layers. We report strained Si layers with biaxial tensile strain equal to 0.007 and 0.012.

By: P. M. Mooney, G. M. Cohen, J. O. Chu, C. E. Murray

Published in: Applied Physics Letters, volume 84, (no 7), pages 1093-5 in 2004


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