Copyright © (2004) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics
We have investigated elastic strain relaxation, i.e. strain relaxation without the introduction of dislocations or other defects, in free-standing SiGe/Si structures. We first fabricated free-standing Si layers supported at a single point by an SiO2 pedestal and subsequently grew an epitaxial SiGe layer. The measured strain relaxation of the SiGe layer agrees well with that calculated using a force-balance model for strain sharing between the SiGe and strained Si layers. We report strained Si layers with biaxial tensile strain equal to 0.007 and 0.012.
By: P. M. Mooney, G. M. Cohen, J. O. Chu, C. E. Murray
Published in: Applied Physics Letters, volume 84, (no 7), pages 1093-5 in 2004
LIMITED DISTRIBUTION NOTICE:
This Research Report is available. This report has been submitted for publication outside of IBM and will probably be copyrighted if accepted for publication. It has been issued as a Research Report for early dissemination of its contents. In view of the transfer of copyright to the outside publisher, its distribution outside of IBM prior to publication should be limited to peer communications and specific requests. After outside publication, requests should be filled only by reprints or legally obtained copies of the article (e.g., payment of royalties). I have read and understand this notice and am a member of the scientific community outside or inside of IBM seeking a single copy only.
Questions about this service can be mailed to reports@us.ibm.com .