Vertical npn BJTs on thin SOI with fully or partially depleted collector are studied by 2-dimensional device simulations. Important device physics and design issues are discussed.
By: Qiqing C. Ouyang, Jin Cai, Tak H. Ning, Phil Oldiges, Jeffery Johnson
Published in: Proceedings of the 2002 IEEE Bipolar/BiCMOS and Technology Meeting. Piscataway, NJ, IEEE, p.28-31 in 2002
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