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Spiral inductors and different types of transmission lines are fabricated by using copper-damascene interconnects and high-resisivity silicon (HRS) or sapphire substrates. The fabrication process is compatible with the concepts of silicon device fabrication. Spiral inductors with 1.4 nH inductance have quality-factors (Q) of 30 at 5.2 GHz and 40 at 5.8 GHz for the HRS and the sapphire substrates, respectively. 80-nH inductors have Q's as high as 13. The transmission line losses are near 4 dB/cm at 10 GHz for microstrips, inverted microstrips, and coplanar lines which are sufficiently small for maximum line lengths within typical silicon chip areas. The paper shows that inductors with high Q's for lumped-element designs in the 1-10 GHz range and transmission lines with low losses for distributed-element designs beyond 10 GHz can be made available with the proposed adjustments to commercial silicon technology.
By: Joachim N. Burghartz, Daniel C. Edelstein, Keith A. Jenkins and Young Kwark
Published in: IEEE Transactions on Microwave Theory and Techniques, volume 45, (no 10), pages 1961-8 in 1997
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