Ambipolar Organic Field-Effect Transistor based on an Organic Heterostructure

Copyright © (2004) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics

Ambipolar charge injection and transport are a prerequisite for a light-emitting organic field-effect transistor (LE-OFET). Organic materials, however, typically show unipolar charge-carrier transport characteristics. Consequently, organic thin-film field-effect transistors based on a single material as active layer can typically either be operated as p- or as n-channel device. In this paper we show that by using a heterostructure with pentacene as hole-transport and N,N'-Ditridecylperylene-3,4,9,10- tetracarboxylic diimide (PTCDI-C(13)H(27)) as electron-transport material, ambipolar characteristics, i.e., simultaneous p- and n-channel formation, can be observed in a single device. An OFET structure is investigated in which electrons and holes are injected from Mg top and Au bottom contacts into the PTCDI-C(13)H(27) and pentacene layers, respectively. Our device exhibits electron and hole mobilities of 3×10**-3 cm**2/Vs and 1×10**-4 cm**2/Vs, respectively. This device architecture serves as a model structure for ambipolar field-effect transistors, which are a prerequisite for light-emitting field-effect transistors.

By: Constance Rost, David J. Gundlach, Siegfried Karg, and Walter Riess

Published in: Journal of Applied Physics, volume 95, (no 10), pages 5782 in 2004

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