We demonstrate RF-compatible quantum well InGaAs MOSFETs integrated on Si substrates, with LG down to 14 nm and a Si CMOS compatible RMG fabrication flow. Devices exhibit simultaneously extrapolated ft and fmax of 370 and 310 GHz, respectively, the highest reported combined ft/fmax for III-V MOSFETs on Si. This is enabled by the scaled LG, gm of 1.75 mS/ìm, 8 nm source and drain spacers and raised source and drain extensions maintaining low access resistance. The use of the InP/In0.75Ga0.25As/InP quantum well offers three times higher electron mobility and a 60% increase of gm, compared to reference devices.
By: C. B. Zota, C. Convertino, Y. Baumgartner, M. Sousa, D. Caimi and L. Czornomaz
Published in: IEEE Internat. Electron Dev Meeting, IEEE, vol.39.4, p.10.1109/IEDM.2018.8614530 in 2018
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