Breakdown Transients in Ultra-Thin Gate Oxides. Transition in the Degradation Rate

We report a sharp threshold at 4 V in the growth rate of breakdown spots in thin films
of SiO2 on silicon. This provides some of the first information concerning the electronic
structure of the breakdown spot.

By: S. Lombardo, J. H. Stathis, B. P. Linder

Published in: Physical Review Letters, volume 90, (no 16), pages 7601+ in 2003

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