Copyright © (2005) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics
Bismuth thin films are formed electrochemically on n-GaAs (110). Bismuth films up to a few hundred nanometers in thickness exhibit a strong (018) texture, while thicker films are polycrystalline. The barrier height of the n-GaAs/Bi Schottky contacts is 0.62eV, about 0.2eV lower than for electrodeposited bismuth films on GaAs (100).
By: Kenneth Rodbell; Philippe M. Vereecken; Chunxin Ji; Peter C. Searson
Published in: Applied Physics Letters, volume 86, (no 12), pages Art. no. 121916 in 2005
LIMITED DISTRIBUTION NOTICE:
This Research Report is available. This report has been submitted for publication outside of IBM and will probably be copyrighted if accepted for publication. It has been issued as a Research Report for early dissemination of its contents. In view of the transfer of copyright to the outside publisher, its distribution outside of IBM prior to publication should be limited to peer communications and specific requests. After outside publication, requests should be filled only by reprints or legally obtained copies of the article (e.g., payment of royalties). I have read and understand this notice and am a member of the scientific community outside or inside of IBM seeking a single copy only.
Questions about this service can be mailed to reports@us.ibm.com .