Fabrication of Silicon-on-Insulator (SOI) and Strain-Si-on-Insulator (SSOI) Wafers Using Ion Implantation

Silicon-on-insulator (SOI) devices provide for increased chip speed, lower voltage operation and increased resistance to cosmic ray induced ‘soft error” events. Further device performance is achieved when Si over the insulator is strained in tensile state. Device applications for “thin”-SOI and SSOI” with Si layers less than 1000 nm, rely on ion implantation to form the SOI wafers. The most direct and economical method to form SOI or SSOI is to implant a high dose of O+ into a Si wafer and, subsequently annealed the implanted wafers with or without a SiGe layer at temperatures > 1300C. For SOI fabrication, the process is called SIMOX (Separation by IMplantation of Oxygen) whereas for SSOI applications the process is called integrated SIMOX-SGOI. Other methods to form SOI and SSOI wafers use some sort of “layer transfer” process, where high dose implants of light ions are used, either alone or in combination with other processes, to form a weakened layer which is split off from a “donor” wafer. The “donated” layer of Si or strained-Si, sometimes combined with an insulator layer, is bonded to a “handle” Si wafer, forming the final SOI or SSOI wafer. This chapter will describe these implantation methods and some of the applications of SOI and SSOI for advanced electronic and photonic devices.

By: Devendra K. Sadana, Michael I. Current

Published in: RC23337 in 2004


This Research Report is available. This report has been submitted for publication outside of IBM and will probably be copyrighted if accepted for publication. It has been issued as a Research Report for early dissemination of its contents. In view of the transfer of copyright to the outside publisher, its distribution outside of IBM prior to publication should be limited to peer communications and specific requests. After outside publication, requests should be filled only by reprints or legally obtained copies of the article (e.g., payment of royalties). I have read and understand this notice and am a member of the scientific community outside or inside of IBM seeking a single copy only.


Questions about this service can be mailed to reports@us.ibm.com .