In-Situ X-Ray Diffraction Analysis of CoSi2 Phase Formation On Single and Polycrystalline Silicon as a Function of Linewidth and Dopant at Rapid Thermal Annealing Rates

By: C. Cabral, Jr., L. A. Clevenger, R. A. Roy, G. B. Stephenson, C. Lavoie, K. L. Saenger, J. Jordan-Sweet, R. Viswanathan, G. Morales, K. F. Ludwig, Jr.

Published in: RC20287 in 1995

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