Copyright © (2001) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics
In metal-oxide-semiconductor structures with poly-crystalline Si gates,
electrons in the inverted channel of the substrate
scatter with electrons in the gate via long-range Coulomb interactions. For
thin oxides, these interactions can cause a significant transfer of momentum
from the channel to the gate, thus reducing the effective mobility of the
two-dimensional electron gas in the substrate. We present calculations of
the dispersion of the interface plasmons in poly-Si/SiO$_{2}$/Si structures,
comparing the results obtained in the long-wavelength limit to those obtained
using the random-phase approximation. Employing the former model, we compute
the effect of plasmon scattering on the effective electron mobility in Si
inversion layers. We find a significant reduction of the mobility for
oxides thinner than about 3 nm.
By: Massimo V. Fischetti
Published in: Journal of Applied Physics, volume 89, (no 2), pages 1232-50 in 2001
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