High-permittivity dielectrics, including HtD2 and Al2O3, are presently being considered for use as
the gate material in place of ultra-thin (sub-2 nm range) thermally grown Si02 in order to effectively continue down-scaling MIS devices that would be hampered by excessive tnnneling currents.1 Since these currents grow exponentially with decreasing barrier width, a thicker film of high-permittivity material can substantially reduce tunneling compared to an ultra-thin Si02 film of equivalent gate capacitance. This benefit of high-k materials is presently offset by issues of fixed charge and mobility degradation.
By: G.J. Gerardi,D. Neumayer, J.H. Stathis, E.P. Gusev, N.A. Bojarczuk, S. Guha
Published in: rc22144 in 2001
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